LPCVD PolySi Deposition


LPCVD PolySi Deposition

Description

Deposition of amorphous silicon and polysilicon. Qualified for 100 mm as well as 150 mm wafers. Depositions require ~4 hours of overhead (in addition to deposition time) for temperature ramping and pump/purge cycles.

Features

  • Standard (large-grain) polysilicon has a deposition rate of 1.2 μm/hr.
  • Small-grain polysilicon has a deposition rate of 340 nm/hr.
  • Amorphous silicon has a deposition rate of 125 nm/hr.


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