LPCVD Nitride Deposition


LPCVD Nitride Deposition

Description

LPCVD of standard (stoichiometric) and low-stress silicon nitride. Depositions require ~4 hours of overhead (in addition to deposition time) for temperature ramping and pump/purge cycles. The tool is qualified for up to 22 100 mm Si wafers per run. Tool is qualified for 150 mm wafers. Substrates are limited to cleaned Si or quartz/fused silica substrates, bare or coated with PECVD or thermal oxide.

Features

  • Standard nitride has a deposition rate of 200 nm/hour with a refractive index of 2.01 at 630 nm.
  • Low-stress nitride has a deposition rate of 256 nm/hour with a refractive index of 2.21 at 630 nm.


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