Our Equipment
- Alpha-Step IQ
- Alpha-Step IQ - W1-040
- Autosorb iQ
- Branson 3000 Barrel Etcher
- Brewer Spinner and Hotplate
- Bruker XRD D8 Discover
- Cee 200CB Coat-Bake System #1
- Cee 200CB Coat-Bake System #2
- Cold plate (Stir-Kool SK-12D)
- Contact Angle (FTA-200)
- Critical Point Dryer
- Denton Gold Sputter Unit (for SEM)
- Dicing Saw (Disco DAD 321)
- Disco 3240 Dicing Saw
- Dymax BlueWave 200
- Electron Beam Evaporation System #1 (Gomez)
- Electron-Beam Evaporation System #2 (PVD-75)
- Ellipsometer (M-2000V)
- Filmetrics F50-UV
- Filmetrics Thickness Monitor (F10-VC) (B)
- Four-Point Probe
- Four-Point Probe (Pro4 4000)
- FTIR-iS50
- Fumehood (Aisle 1 - Laurell / Headway Spinner/Hotplate)
- Fumehood (Aisle 2 - KOH/TMAH)(Station A)
- Fumehood (Aisle 3 - General Use)
- GLAD System (Achilles)
- Glass Bonding Area
- Heidelberg MLA150
- Helium Ion Microscope (Zeiss Orion NanoFAB with Ga FIB)
- ICPRIE (Alcatel AMS110)
- ICPRIE (Cobra Metal Etch)
- ICPRIE (Oxford Estrelas)
- Keithley 4200-Semiconductor Characterization System (SCS Analyzer)
- Leica ACE600 Carbon/Metal coater
- Leica INM-100 Optical Microscope #1
- Leica INM-100 Optical Microscope #2
- Litho Wet Deck #1
- Litho Wet Deck #2
- LPCVD Boron Doped PolySi Deposition
- LPCVD Nitride Deposition
- LPCVD PolySi Deposition
- Mask Aligner (Grover - MA#1)
- Mask Aligner (IR through-wafer) (Bert - MA#1)
- Mask/Bond Aligner (SUSS MA/BA6)
- Minibrute Bottom Furnace (Boron Doping)
- Minibrute Middle Furnace (Thermal Oxide and General Annealing)
- Minibrute Top Furnace (Thermal oxide only)
- Muffle Furnace
- Muffle Furnace (For PZT only!)
- Nanometrics Hall Measurement (HL5500)
- Nanoscribe Photonic Professional GT
- Olympus Laser Confocal Microscope (OLS3000)
- Parylene Deposition System
- Pattern Generator (Heidelberg DWL-200)
- PDMS Process area
- PECVD (Trion)
- Probe Station #1 (Wentworth)
- Probe Station #2 (Wentworth)
- RAITH150 Two EBL System
- RIE (Oxford NGP80)
- RIE (Trion)
- RIE (uEtch)
- Rigaku XRD Ultima IV
- Savant SuperModulyo Freeze Dryer
- Scanning Electron Microscope (Zeiss EVO MA10)
- Scanning Electron Microscope (Zeiss Sigma FESEM w/ EDX & EBSD)
- Scriber
- Servo Precision Drill Press (7140-M)
- Sitek SRD (bottom - 100 mm)
- Sitek SRD (top - 150 mm)
- Spectrophotometer (Perkin-Elmer NIR-UV)
- Spectrophotometer UV/VIS (Hitachi U-3900H)
- Spin Rinse Dryer (Wet aisle #1)
- Sputtering System #1 (Bob)
- Sputtering System #2 (Doug)
- Sputtering System #3 (Floyd)
- Sputtering System #4 (Moe)
- SUSS Bonder
- Thin Film Stress Measurement (FLX 2320)
- TPT HB16 Wire bonder
- Tystar Doped Anneal
- Tystar General Anneal
- Tystar Oxidation
- Upright Microscope (LV150)
- UV / Ozone Bonder
- UV Flood Exposure System (Sunny)
- Vacuum Ovens (×3)
- Vapour HF Etcher (memsstar Orbis Alpha)
- VASE Ellipsometer
- Wet Process - General Use - Wet Deck 1A
- Wet Process - General Use - Wet Deck 1B
- Wet Process - General Use - Wet Deck 2A
- Wet Process - HF/BOE - Wet Deck 1A
- Wet Process - HF/BOE - Wet Deck 1B
- Wet Process - ISE KOH Bath - Wet Deck 2A
- Wet Process - Metal Etch - Wet Deck 1A
- Wet Process - Metal Etch - Wet Deck 1B
- Wet Process - Piranha - Wet Deck 2B
- XeF2 Etching System
- XPS Imaging Spectrometer (Kratos AXIS Ultra)
- Yamato Oven
- YES HMDS Oven
- Zeiss AXIO Lab.A1 (east plasma area)
- Zeiss AXIO Lab.A1 (W1-040)
- Zeiss AXIO Lab.A1 (west plasma area)
- Zeiss Stemi 508 (east plasma area)
- Zeiss Stemi 508 (W1-040)
- Zygo Optical Profilometer
Description
A versatile load-locked ICPRIE tool for silicon etching, from Bosch high-rate recipes capable of through-wafer etching, to unswitched pseudo-Bosch recipes suitable for etching thin SOI device layers for Si photonics applications. Only photoresist or oxide may be used for etch masks (i.e., wafers cannot contain any exposed metal) when using Bosch or unswitched etch processes. The default cooling configuration uses the recirculating chiller (–10 °C to +50 °C range). If you wish to use the system in Cryo mode (–110 °C to +100 °C range), please book the ICPRIE - Oxford Estrelas (Cryo) tool. Note that metal hard masks are allowed for cryo etching.Features
- SF6, C4F8, O2, Ar close-coupled process gases available
- Continuous quartz clamping with He backside cooling
- 100 mm & 150 mm wafer handling available
- 5 kW ICP generator
- 300 W HF & LF chuck generators
- Recirculating chiller (–10 °C to +50 °C operating range)
- LN2 Cooling mode available (–110 °C)
- Single-wafer loadlock
- ~100:1 resist:Si selectivity for Bosch etching
- ~250:1 oxide:Si selectivity for Bosch etching