Substrate – 100 mm Si with ~0.5 µm thermal oxide


Description

100 mm (4") Si wafer with ~0.5 µm thermal oxide

Features

  • ~500 nm thermal oxide grown via wet oxidation
  • Diameter: 100 mm
  • Thickness: 525 ± 20 µm
  • Orientation: <100>
  • Type/dopant: P/boron
  • Resistivity: 10–20 Ω•cm


  • Academic Rate: $25.00/each
  • Industrial Rate: $25.00/each

100 mm Si wafer with thermal oxide


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