The nanoFAB invites you to attend a public seminar on atomic layer deposition, presented by Craig Ward from Oxford Instruments, Inc.. From 2:00–3:00 p.m. on Wednesday, January 30th, 2019, Craig will present a technology and applications overview of Oxford’s ALD technologies. A general question-and-answer period will immediately follow the presentation.
Light refreshments will be provided prior to the seminar.
Title: “Flexibility in ALD process parameters allows fine control of deposited film physical properties”
Date: Wednesday, January 30th, 2019
Time: 2:00–3:00 p.m.
Location: ETLC E1-018
Abstract: Atomic Layer Deposition (ALD) delivers precisely controlled ultra-thin films with conformal coating into high aspect ratio structures for advanced applications on sub-nanometre scales. Remote plasma-assisted ALD enables low-temperature processes with minimal impact on interfacial integrity. Plasma-enhanced ALD provides effective metal chemistry through use of reducing plasma chemistry rather than complex thermal precursors. Plasma also eliminates the need for water as a precursor, reducing purge times between ALD cycles. Plasma-enhanced ALD delivers higher-quality films through improved removal of impurities, leading to lower resistivity and film density. Recent developments using an active bias-controlled substrate table, through a coupled RF source, adds further process control with respect to surface pre-conditioning and film stress.
Presenter: Craig Ward, US Applications Manager (Oxford Instruments America, Inc.)
Please register to confirm your attendance by 5:00 p.m., January 28th, 2019.
