The nanoFAB invites you to attend a public seminar on atomic layer deposition, presented by G. Bruce Rayner, Jr. and Noel O’Toole from Kurt J. Lesker Company. From 1:30–2:30 p.m. on Wednesday, December 12th, 2018, Bruce and Noel will present a technology and applications overview of Lesker’s ALD technologies. A general question-and-answer period will immediately follow the presentation.
Light refreshments will be provided prior to the seminar.
Title: “Ultra-High Purity Process Capability for High-Performance Atomic Layer Deposition”
Date: Wednesday, December 12th, 2018
Time: 1:30–2:30 p.m.
Location: ETLC E1-018
Abstract: Ultra-high purity (UHP) process capability is motivated by the need to produce superior, high-quality thin films and interfaces by atomic layer deposition (ALD) techniques. In particular, UHP equipment design reduces background impurity levels, including oxygen, to limit incorporation during film growth. Creating and maintaining a UHP process environment are also essential for ALD process reproducibility. This presentation will address the potential sources of background contamination, as well as system design requirements to obtain a controlled UHP process environment. Results will be presented that demonstrate the effectiveness of this technology to obtain high-quality titanium nitride thin films by plasma-enhanced ALD (PEALD) techniques.
Presenters: G. Bruce Rayner, Jr., PhD, Principal Scientist – ALD and Noel O’Toole, ALD Product Manager (Kurt J. Lesker Company)
Please register to confirm your attendance by 5:00 p.m., December 10th, 2018.
