Our Equipment
- Alpha-Step IQ
- Alpha-Step IQ - 10k
- Atomic Force Microscope (Asylum MFP-3D AFM)
- Atomic Force Microscope (Dimension Edge)
- Auger Microprobe (JAMP-9500F, JEOL)
- Autosorb iQ
- Autosorb Quantachrome 1MP
- Branson 3000 Barrel Etcher
- Brewer Spinner and Hotplate
- Cee 200CB Coat-Bake System #1
- Cee 200CB Coat-Bake System #2
- Cold plate (Stir-Kool SK-12D)
- Contact Angle (FTA-200)
- Contact Angle Measurement System (First 10 Angstroms)
- Critical Point Dryer
- Denton Gold Sputter Unit (for SEM)
- Dicing Saw (Disco DAD 321)
- Differential Scanning Calorimeter (DSC)
- Disco 3240 Dicing Saw
- Electron Beam Evaporation System #1 (Gomez)
- Ellipsometer (M-2000V)
- Eppendorf Centrifuge 5804R
- Filmetrics Resist and Dielectric Thickness Mapping System
- Filmetrics Thickness Monitor (F10-VC) (A)
- Filmetrics Thickness Monitor (F10-VC) (B)
- Flexus Wafer Stress Measurement System
- Four Point Probe
- Four Point Probe (Pro4 4000) (A)
- Four Point Probe (Pro4 4000) (B)
- Fumehood (Aisle 2 - KOH/TMAH)
- Fumehood (Aisle 1 - Headway Spinner/Hotplate)
- Fumehood (Aisle 3 - General Use)
- GLAD System #1 (Dagda)
- GLAD System #2 (Achilles)
- Glass Bonding Area
- Helium Ion Microscope (Zeiss Orion NanoFAB with Ga FIB)
- ICPRIE - Oxford Estrelas
- ICPRIE (Alcatel AMS110)
- ICPRIE (Cobra Metal Etch)
- Industrial L-Edit
- Inpsection Microscope (Leitz Ergolux in 10K lab)
- Inspection Microscope (Leica MS5 in 10K lab)
- Inspection Microscope (Leitz Ergolux in 1K lab)
- Keithley 4200-Semiconductor Characterization System (SCS Analyzer)
- LEDIT on two computer systems
- Leica ACE600 Carbon/Metal coater
- Leica INM 100 Optical Microscope
- Leica INM-100 Optical Microscope
- Litho Wetdeck #1
- Litho Wetdeck #2
- Lithography Process Station 1
- Lithography Process Station 2
- LPCVD Boron Doped PolySi Deposition
- LPCVD Nitride Deposition
- LPCVD PolySi Deposition
- Mask Aligner (Grover - MA#1)
- Mask Aligner (IR through-wafer) (Bert - MA#1)
- Mask Cleaning Station
- Mask/Bond Aligner (SUSS MA/BA6)
- Micromanipulator
- Minibrute Bottom Furnace (Boron Doping)
- Minibrute Middle Furnace (Thermal Oxide and General Annealing)
- Minibrute Top Furnace (Thermal oxide and General annealing)
- Muffle Furnace
- Muffle Furnace (For PZT only!)
- NanoIndenter (Hysitron TI 900)
- Nanometrics Hall Measurement (HL5500)
- NanoWizard II AFM (JPK)
- Olympus Confocal Microscope (FV10i)
- Olympus Laser Confocal Microscope (OLS3000)
- Orbis PC Micro-EDXRF Elemental Analyzer
- Parylene Deposition System
- Pattern Generator (Heidelberg DWL-200)
- Pattern Generator Compile software on one computer system
- PDMS Process area
- PECVD (Trion)
- Photomask Processing Station
- Probe Station #1 (Wentworth)
- Probe Station #2 (Wentworth)
- Profilometer (Tencor P-6)
- Raith 150 EBL System
- Raith 150-two
- Raith EBL software on two computer systems
- RIE (Oxford NGP80)
- RIE (Trion)
- RIE (uEtch)
- Rigaku XRD Ultimate IV
- Savant SuperModulyo Freeze Dryer
- Scanning Electron Microscope (Tescan Vega-3 w/ EDX)
- Scanning Electron Microscope (TM-1000)
- Scanning Electron Microscope (Zeiss EVO MA10)
- Scanning Electron Microscope (Zeiss Sigma FESEM w/ EDX & EBSD)
- Scriber
- Servo Precision Drill Press (7140-M)
- Solitec Spinner and Vacuum Hotplate
- Spectrophotometer (Perkin-Elmer NIR-UV)
- Spectrophotometer UV/VIS (Hitachi U-3900H)
- Speedvac Concentrator
- Spin Rinse Dryer (Wet aisle #1)
- Spin Rinse Dryer (Wet aisle #2)
- Sputtering System #1 (Bob)
- Sputtering System #2 (Doug)
- Sputtering System #3 (Floyd)
- SUSS Bonder
- Teflon AF Processing
- Thermal Gravimetric Analyzer (TGA)
- Thin Film Stress Measurement (FLX 2320)
- TOF-SIMS Imaging Spectrometer (ION-TOF GmbH)
- Tystar Doped Anneal
- Tystar General Anneal
- Tystar Oxidation
- Upright Microscope (LV150)
- UV / Ozone Bonder
- UV Flood Exposure System (Sunny)
- UV/VIS Spectrophotometer (U-3900H)
- UV/VIS Spectrophotometer (U-3900H)
- Vacuum Ovens (×3)
- Vapour HF Etcher (memsstar Orbis Alpha)
- VASE Ellipsometer
- Wet Process - General Use - DD Aisle#1
- Wet Process - General Use - DD Aisle#2
- Wet Process - General Use - WD Aisle#1
- Wet Process - HF/BOE - DD Aisle#1
- Wet Process - HF/BOE - DD Aisle#2
- Wet Process - Metal Etch - DD Aisle#1
- Wet Process - Metal Etch - DD Aisle#2
- Wet Process - Metal Etch - WD Aisle#1
- Wet Process - Piranha - WD Aisle#2
- XeF2 Etching System
- XPS Imaging Spectrometer (Kratos AXIS Ultra)
- XPS Spectrometer (Kratos AXIS 165)
- Yamato Oven
- YES HMDS Oven
- Zygo Optical Profilometer
TOF-SIMS Imaging Spectrometer (ION-TOF GmbH)
Description
Time of Flight-Secondary Ion Mass Spectroscopy is an ultra high sensitive surface analysis technique providing detailed elemental and molecular information about surfaces, thin layers and interfaces.Features
- dual beam profiling (Ar/O2/Cs for layer removal, Ga for analysis)
- sputter rate of analysis beam < 0.1 nm/min
- analyser mass range 1-9,000 with sensitivity < 1ppm
- mass resolution of 8,000 at m=29 u and 12,000 at m=372 u
- surface imaging with parallel mass detection
- secondary electron detector for imaging
- maximum beam raster size 500 um x 500 um
- macro (stage) raster upto 5 cm x 5 cm
- sample holder accomodating 2 cm diameter samples up to 6 mm thick
- 4D raw data file (x, y, z, m) for each secondary ion to allow reconstruction of spectra, profiles and images
- pulsed low-energy (20 eV) electron flood gun for charge compensation of insulating samples
TOF-SIMS Imaging Spectrometer (ION-TOF GmbH)
Description
Time of Flight-Secondary Ion Mass Spectroscopy is an ultra high sensitive surface analysis technique providing detailed elemental and molecular information about surfaces, thin layers and interfaces.Features
- dual beam profiling (Ar/O2/Cs for layer removal, Ga for analysis)
- sputter rate of analysis beam < 0.1 nm/min
- analyser mass range 1-9,000 with sensitivity < 1ppm
- mass resolution of 8,000 at m=29 u and 12,000 at m=372 u
- surface imaging with parallel mass detection
- secondary electron detector for imaging
- maximum beam raster size 500 um x 500 um
- macro (stage) raster upto 5 cm x 5 cm
- sample holder accomodating 2 cm diameter samples up to 6 mm thick
- 4D raw data file (x, y, z, m) for each secondary ion to allow reconstruction of spectra, profiles and images
- pulsed low-energy (20 eV) electron flood gun for charge compensation of insulating samples
