Kurt J. Lesker 150LX ALD system now open for training

The nanoFAB is pleased to announce that our newly installed and commissioned KJLC 150LX Atomic Layer Deposition system is now fully operational and available for training to all nanoFAB users.  The ALD offers excellent uniformity and controlled growth of a variety of films on an atomic scale.   Its high-vacuum load-lock and UHV-type sealing, combined with near-constant high-purity Ar flow, enable high-purity process conditions and excellent quality films.

Main system features include:

  • Single wafer transfer load-lock
  • Substrate heating up to 500 °C
  • 150 mm platen, with an available carrier for samples <150 mm
  • Thermal and plasma-enhanced (PE-ALD) processes available
  • In situ film growth monitoring using Film Sense FS-1EX multiwavelength ellipsometer

Currently available processes include:

  • Aluminium oxide (Al2O3)
    • TMA + H2O
    • TMA + O2 plasma
    • TMA + O3
  • Silicon dioxide (SiO2)
    • 3DMAS + O2 plasma
  • Hafnium oxide (HfO2)
    • TDMAH + H2O
    • TDMAH + O2 plasma
  • Zirconium oxide (ZrO2)
    • TDMAZ + H2O
    • TDMAZ + O2 plasma
  • Silicon nitride (Si3N4)
    • 3DMAS + N2 plasma
  • Titanium nitride (TiN)
    • TiCl4 + N2/H2 plasma
  • Aluminum nitride (AlN)
    • TMA + N2 plasma

Refer to the process information page for up to date and detailed information.

Al2Ofilm properties

The KJLC 150LX ALD is available to users for self-use (after training) and fee-for-service work. Any users interested in getting trained on this tool should submit a training request via LMACS. If you have any questions, please contact Aaron Hryciw (ahryciw@ualberta.ca) or Scott Munro (smunro@ualberta.ca).