The nanoFAB is pleased to announce that a Hitachi S4800 FESEM has been fully commissioned and now is available for user training. The S4800 is equipped with a cold field-emission gun(c-FEG) and configured with various imaging detectors.
The Hitachi S4800 FESEM features:
- Resolution: 1 nm (SE @15 kV); 2 nm (SE @1 kV); 1.4 nm (SE @1 kV with Deceleration); 1nm (BF-STEM @30 kV)
- Acceleration Voltage: 0.5 to 30 kV
- Quick sample exchange: less than 1 min
- Detectors: Upper/Lower SE, BSD, BF/DF-STEM
Imaging Drift Rate:
Due to a very stable installation within the nanoFAB, an imaging drift rate of less than 2nm/min was measured after the c-FEG was flashed and beam has been on for about 4 hours:
The Hitachi S4800 FESEM is now open to general users. If you are interested in getting trained on the microscope, please submit a “training” request on LMACS. If you have any questions, please feel free to contact Peng Li (Peng.Li@ualberta.ca) – the Characterization Group Manager.
Example Images
Si Helix
- Imaging conditions: 5 kV, Upper SE detector
Mn-Co nano-structures
- Imaging conditions: 5 kV, Upper SE detector
TiO2 nanotubes
- Imaging conditions: 2 kV, Upper SE detector
- Sample Courtesy: Prof. Karthik Shankar, Department of Electrical & Computer Engineering, University of Alberta
ZnO2 and Ag nano-structures
- Imaging conditions: 2 kV, Upper SE detector
Au/SiO2 nanoparticles
- Imaging conditions: 30 kV, simultaneous BF-STEM, DF-STEM and Upper SE detector
- Sample Courtesy: Huijun Mao and Prof. Mark McDermott, Department of Chemistry, University of Alberta