Hitachi S4800 FESEM is Available

The nanoFAB is pleased to announce that a Hitachi S4800 FESEM has been fully commissioned and now is available for user training. The S4800 is equipped with a cold field-emission gun(c-FEG) and configured with various imaging detectors.  

The Hitachi S4800 FESEM features:

  • Resolution: 1 nm (SE @15 kV); 2 nm (SE @1 kV); 1.4 nm (SE @1 kV with Deceleration); 1nm (BF-STEM @30 kV)
  • Acceleration Voltage: 0.5 to 30 kV
  • Quick sample exchange: less than 1 min
  • Detectors: Upper/Lower SE, BSD, BF/DF-STEM

Imaging Drift Rate: 

Due to a very stable installation within the nanoFAB, an imaging drift rate of less than 2nm/min was measured after the c-FEG was flashed and beam has been on for about 4 hours: 

The Hitachi S4800 FESEM is now open to general users. If you are interested in getting trained on the microscope, please submit a “training” request on LMACS. If you have any questions, please feel free to contact Peng Li ( – the Characterization Group Manager.

Example Images

Si Helix

  • Imaging conditions:  5 kV, Upper SE detector

Mn-Co nano-structures

  • Imaging conditions:  5 kV, Upper SE detector

TiO2 nanotubes

  • Imaging conditions:  2 kV, Upper SE detector
  • Sample Courtesy: Prof. Karthik Shankar, Department of Electrical & Computer Engineering, University of Alberta

ZnO2 and Ag nano-structures

  • Imaging conditions:  2 kV, Upper SE detector

Au/SiO2 nanoparticles

  • Imaging conditions:  30 kV, simultaneous BF-STEM, DF-STEM and Upper SE detector
  • Sample Courtesy: Huijun Mao and Prof. Mark McDermott, Department of Chemistry, University of Alberta